PSMN0R9-30YLDX

The PSMN0R9-30YLD is a 30V logic level N-channel Enhancement Mode MOSFET using NextPowerS3 technology. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. It is particularly suited to high efficiency applications at high switching frequencies. Suitable for on-board DC-to-DC solutions for server and telecommunications and secondary-side synchronous rectification in telecommunication applications.

• Avalanche rated, 100% tested at I (as) = 190A
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery, s-factor <gt/>1
• Low spiking and ringing for low EMI designs
• Optimised for 4.5V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach power SO8 package
• Wave solderable exposed leads for optimal visual solder inspection

Anwendungen

Power-Management, Industrie, Kommunikation & Netzwerke, Medizinelektronik