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UF3C065080K4S
Silicon Carbide MOSFET, Single, N Channel, 31 A, 650 V, 0.08 ohm, TO-247
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| 1+ | €5.770 |
| 5+ | €5.360 |
| 10+ | €4.950 |
| 50+ | €4.540 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C065080K4S
Order Code4014239
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id31A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max5V
Power Dissipation190W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
31A
Drain Source On State Resistance
0.08ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
12V
Power Dissipation
190W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0063