Print Page
STL4N80K5
Power MOSFET, N Channel, 800 V, 2.5 A, 2.5 ohm, PowerFLAT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTL4N80K5
Order Code2807274
Product RangeMDmesh K5
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
Notify me when back in stock
| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | €0.753 |
Price for:Each
Minimum: 3000
Multiple: 3000
€2,259.00 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTL4N80K5
Order Code2807274
Product RangeMDmesh K5
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2.5A
Drain Source On State Resistance2.5ohm
Transistor Case StylePowerFLAT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation38W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeMDmesh K5
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STL4N80K5 is a very high voltage N-channel power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. applications include switching applications.
- Industry’s lowest RDS(on) x area, industry’s best figure of merit (FoM)
- Ultra-low gate charge, 100% avalanche tested, Zener protected
- 800V minimum drain-source breakdown voltage (VGS = 0, ID = 1mA, TC = 25°C)
- 2.5ohm maximum static drain-source on resistance (VGS = 10V, ID = 1.5A, TC = 25°C)
- 2.5A maximum source-drain current (TC = 25°C)
- 3 to 5V gate threshold voltage range (VDS = VGS, ID = 100µA, TC = 25°C)
- 175pF typical input capacitance (VDS = 100V, f = 1MHz, VGS = 0, TC = 25°C)
- 20pF typical output capacitance (VDS = 100V, f = 1MHz, VGS = 0, TC = 25°C)
- 10.5nC typical total gate charge (VDD = 640V, ID = 3A, VGS = 10V)
- PowerFLAT™ package, operating junction temperature range from -55 to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
PowerFLAT
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
2.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
8Pins
Product Range
MDmesh K5
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907
Product traceability