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GD100HFU120C2S
IGBT Module, Half Bridge, 200 A, 3.1 V, 1.136 kW, 150 °C, Module
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €64.540 |
| 5+ | €60.930 |
| 10+ | €56.880 |
| 50+ | €56.030 |
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€64.54 (ex VAT)
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD100HFU120C2S
Order Code3912072
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current200A
DC Collector Current200A
Collector Emitter Saturation Voltage Vce(on)3.1V
Collector Emitter Saturation Voltage3.1V
Power Dissipation1.136kW
Power Dissipation Pd1.136kW
Junction Temperature Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
200A
Collector Emitter Saturation Voltage
3.1V
Power Dissipation Pd
1.136kW
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
3.1V
Power Dissipation
1.136kW
Junction Temperature Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.3