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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFB30N120P
Order Code3438372
Product RangePolar HiPerFET
Technical Datasheet
203 In Stock
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Quantity | Price (ex VAT) |
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1+ | €42.240 |
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10+ | €35.100 |
50+ | €34.400 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFB30N120P
Order Code3438372
Product RangePolar HiPerFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id30A
Drain Source On State Resistance0.35ohm
Transistor Case StylePLUS264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation1.25kW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangePolar HiPerFET
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
PLUS264
Rds(on) Test Voltage
10V
Power Dissipation
1.25kW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.35ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
6.5V
No. of Pins
3Pins
Product Range
Polar HiPerFET
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004
Product traceability