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Quantity | Price (ex VAT) |
---|---|
1+ | €4.280 |
10+ | €3.300 |
25+ | €3.040 |
50+ | €2.900 |
100+ | €2.750 |
250+ | €2.620 |
500+ | €2.530 |
1000+ | €2.460 |
Product Information
Product Overview
The BTS640S2G is a N-channel high-side vertical Power FET Switch with charge pump, ground referenced CMOS compatible input and diagnostic feedback and proportional sense of load current, monolithically integrated in smart SIPMOS® technology. It provides embedded protective functions, under-voltage and overvoltage shutdown with auto-restart and hysteresis.
- Short-circuit protection
- Current limitation
- Proportional load current sense
- CMOS compatible input
- Open drain diagnostic output
- Fast demagnetization of inductive loads
- Overload protection
- Thermal shutdown
- Overvoltage protection including load dump
- Reverse battery protection
- Loss of ground and loss of VBB protection
- Electrostatic discharge (ESD) protection
- High voltage capability
- Benchmark energy robustness
Applications
Industrial, Computers & Computer Peripherals, Automotive
Warnings
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
High Side
34V
0.03ohm
7Pins
Active High
-40°C
AEC-Q100
MSL 3 - 168 hours
AEC-Q100
1Channels
24A
TO-263 (D2PAK)
Yes
1Outputs
150°C
-
No SVHC (21-Jan-2025)
TO-263 (D2PAK)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate