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DMPH6050SK3-13
Power MOSFET, P Channel, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.395 |
| 500+ | €0.315 |
| 1000+ | €0.287 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€44.50 (ex VAT)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMPH6050SK3-13
Order Code3518391RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id23.6A
On Resistance Rds(on)0.05ohm
Drain Source On State Resistance0.05ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.9W
Power Dissipation Pd1.9W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
DMPH6050SK3-13 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include load switch, DC-DC converters, motor driving.
- 100% unclamped inductive switching – ensures more reliable and robust end application
- Low Qg – minimizes switching loss, low RDS(ON) – minimizes on state loss
- Drain-source voltage is -60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is -7.2A at TA = +25°C, steady state, VGS = -10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -40A at TA = +25°C
- Total power dissipation is 1.9W at TA = +25°C
- Static drain-source on-resistance is 50mohm max at VGS = -10V, ID = -7A, TA = +25°C
- TO252 (DPAK) case
- Operating and storage temperature range from -55 to +175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.05ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
23.6A
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.9W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
Product traceability