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Menge | Preis (ohne MwSt.) |
---|---|
100+ | 2,380 € |
250+ | 2,260 € |
500+ | 2,020 € |
1000+ | 1,710 € |
Produktspezifikationen
Produktbeschreibung
SIC645AER-T1-GE3 is a VRPower® Smart power stage module with integrated high accuracy current and temperature monitors. It is a high side and low side MOSFET, a high performance driver with integrated bootstrap FET. The SiC645 offers high accuracy current and temperature monitors that can be fed back to the controller and doubler to complete a multiphase DC/DC system. The device features a 3.3V (SiC645A) compatible tri-state PWM input that, working together with multiphase PWM controllers, will provide a robust solution in the event of abnormal operating conditions. Applications include high frequency and high efficiency VRM and VRD, core, graphic, and memory regulators for microprocessors, high density VR for server, networking, and cloud computing, POL DC/DC converters and video gaming consoles.
- 3.3V PWM input, 4.5V to 18V input voltage range
- Supports 60A DC current, down slope current sensing
- ±3% accuracy current monitor (IMON) with REFIN input
- 8mV/°C temperature monitor with OT flag
- Dedicated low side FET control input
- Fault protection, high side FET short and over-current protection
- Over-temperature protection, VCC and VIN under voltage lockout (UVLO)
- Open drain fault reporting output
- Up to 2MHz switching frequency
- Temperature range from -40 to +125°C
Technische Spezifikationen
Smart-Power-Stage-Modul
18V
PowerPAK MLP55
0.1µF
-40°C
-
PowerPAK MLP55
4.5V
2MHz
32Pin(s)
56pF
125°C
To Be Advised
Technische Dokumente (2)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Malaysia
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat