TBD62786AFWG(Z,EHZ

TBD62786AFWG(Z,EHZ is a TBD62786A series BiCD silicon monolithic integrated circuit. Each output has an internal clamp diode that clamps the back electromotive force generated in driving inductive loads.

• 8-ch low active source type DMOS transistor array
• High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
• Input voltage range from -30 to -2.8V (IOUT = -100mA or more, VDS=2.0V, output on, Ta = -40 to 85°C)
• Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VIN = 0V, VOUT = VGND = -50V, Ta = 85°C)
• Current consumption is 5mA (max, VIN = -2.8V, VGND = -50V, output OPEN, per 1 ch)
• Clamp diode leakage current is 1μA (max, VR = 50V, Ta = 85°C)
• Turn on delay is 0.2μs (typ, VOUT = VGND = -50V, RL = 160 ohm, CL = 15pF)
• Turn off delay is 2.0μs (typ, VOUT = VGND = -50V, RL = 160 ohm, CL = 15pF)
• P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C

Hinweise

Please be careful about thermal conditions during use.