Ihr Bedarf geht darüber hinaus?
Menge | Preis (ohne MwSt.) |
---|---|
100+ | 3,830 € |
250+ | 3,760 € |
500+ | 3,680 € |
Produktspezifikationen
Produktbeschreibung
MASTERGAN4LTR is a 600V half-bridge enhancement-mode GaN HEMT with a high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. Typical applications are high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.
- Reverse current capability, zero reverse recovery loss
- UVLO protection on VCC, internal bootstrap diode
- Interlocking function, dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection, bill of material reduction
- Very compact and simplified layout, flexible, easy, and fast design
- QFN package
- Industrial temperature range from -40°C to 125°C
- Output capacitance is 14.2pF (VGS = 0V, VDS = 400V)
Technische Spezifikationen
1Kanäle
Halbbrücke
31Pin(s)
Oberflächenmontage
-
4.75V
-40°C
-
-
No SVHC (21-Jan-2025)
-
GaN HEMT
QFN-EP
Nicht invertierend
-
9.5V
125°C
-
-
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Thailand
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat