Ihr Bedarf geht darüber hinaus?
Menge | Preis (ohne MwSt.) |
---|---|
1+ | 1,180 € |
10+ | 0,791 € |
100+ | 0,576 € |
500+ | 0,506 € |
1000+ | 0,462 € |
5000+ | 0,385 € |
Produktspezifikationen
Produktbeschreibung
The RFD16N05LSM9A is a N-channel logic level Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use with logic level (5V) driving sources in applications such as programmable controllers, switching regulators, switching converters and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
- UIS SOA rating curve (single pulse)
- Can be driven directly from CMOS, NMOS and TTL circuits
- SOA is power dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- High input impedance
- Majority carrier device
Anwendungen
Power-Management, Motorantrieb & -steuerung, Industrie
Hinweise
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische Spezifikationen
n-Kanal
16A
TO-252AA
5V
60W
150°C
-
50V
0.047ohm
Oberflächenmontage
2V
3Pin(s)
-
Lead (27-Jun-2024)
Technische Dokumente (2)
Alternativen für RFD16N05LSM9A
1 Produkt(e) gefunden
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:China
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat