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Menge | Preis (ohne MwSt.) |
---|---|
100+ | 2,850 € |
250+ | 2,790 € |
Produktspezifikationen
Produktbeschreibung
NCV57001DWR2G is a high-current single-channel IGBT gate driver with internal galvanic isolation, designed for high system efficiency and reliability in high-power applications. Its features include complementary inputs, open drain FAULT, and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCV57001 accommodates both 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side including negative voltage capability.
- High current output (+4/-6A) at IGBT Miller plateau voltages
- Short propagation delay with accurate matching, active miller clamp to prevent spurious gate turn-on
- DESAT protection with programmable delay
- Negative voltage (down to -9V) capability for DESAT
- Soft turn off during IGBT short circuit, IGBT gate clamping during short circuit
- Tight UVLO thresholds for bias flexibility, wide bias voltage range including negative VEE2
- 5000V galvanic isolation (to meet UL1577 requirements)
- High transient immunity, high electromagnetic immunity
- 3.3V to 5V input supply voltage range, designed for AEC-Q100 Certification
- SOIC-16 wide body package, ambient temperature range from -40 to 125°C
Technische Spezifikationen
1Kanäle
High-Side und Low-Side
16Pin(s)
Oberflächenmontage
-
3.3V
-40°C
60ns
-
MSL 1 - unbegrenzt
Isoliert
IGBT
WSOIC
-
-
5V
125°C
66ns
AEC-Q100
No SVHC (27-Jun-2024)
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Philippines
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat