Produktspezifikationen
Produktbeschreibung
The NCP5901DR2G is a dual high performance MOSFET Gate Driver optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. It can drive up to 3nF load with a 25ns propagation delay and 20ns transition time. Adaptive anti-cross-conduction and power saving operation circuit can provide a low switching loss and high efficiency solution for notebook and desktop systems. Bidirectional EN pin can provide a fault signal to controller when the gate driver fault detect under OVP, UVLO occur. Also, an under-voltage lockout function guarantees the outputs are low when supply voltage is low.
- Faster rise and fall times
- Adaptive anti-cross-conduction circuit
- Pre OV function
- ZCD detect
- Floating top driver accommodates boost voltages of up to 35V
- Output disable control turn-OFF both MOSFETs
- Under-voltage lockout
- Power saving operation under light load conditions
- Direct interface to NCP6151 and other compatible PWM controllers
Anwendungen
Computer & Computerperipheriegeräte
Hinweise
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische Spezifikationen
2Kanäle
High-Side und Low-Side
SOIC
SOIC
Nicht invertierend
-
13.2V
125°C
11ns
-
-
MOSFET
8Pin(s)
Oberflächenmontage
-
4.5V
-10°C
16ns
-
Technische Dokumente (3)
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Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Philippines
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat