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Menge | Preis (ohne MwSt.) |
---|---|
1+ | 819,380 € |
Produktspezifikationen
Produktbeschreibung
Three-phase inverter reference design and evaluation board populated with six GD3160 gate drivers for IGBT/SiC MOSFET devices. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently and comes with fault management and supporting circuitry. Evaluation kit is designed to connect to a compatible HybridPACK™ Drive SIC/IGBT module or onsemi VE-trac™ IGBT module for full three phase inverter applications development.
- 3 phase reference design for HP drive featuring GD3160
- GD3160 advanced single channel gate driver for IGBT and SiC MOSFETs
- Integrated galvanic signal isolation (up to 8KV)
- SPI interface for safety monitoring, configuration and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated ADC for monitoring parameters from HV domain
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
Lieferumfang
Three-phase inverter reference design and evaluation board, Quick start guide.
Technische Spezifikationen
NXP
IGBT/SiC-Gate-Treiber
Referenzdesign-Board GD3160, PCIe-Kabel (S32SDEV-CON18), antistatischer Beutel, Kurzanleitung
No SVHC (27-Jun-2024)
GD3160
3-Phasen-EV-Motorsteuerung
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Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:United States
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat