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Menge | Preis (ohne MwSt.) |
---|---|
1+ | 3,470 € |
10+ | 3,040 € |
25+ | 2,520 € |
50+ | 2,260 € |
100+ | 2,080 € |
250+ | 1,940 € |
500+ | 1,840 € |
1000+ | 1,740 € |
Produktspezifikationen
Produktbeschreibung
MPQ6528 is a H-bridge gate driver IC that can drive two half-bridges with four N-channel power MOSFETs across a wide 5V to 60V input voltage (VIN) range. The device’s integrated, regulated charge pump generates gate driver power (VREG), and a bootstrap (BST) capacitor generates the supply voltage for the high-side MOSFET (HS-FET) driver. An internal trickle-charge circuit maintains a sufficient HS-FET gate driver voltage even at 100% duty cycle. Full protection features include configurable short-circuit protection (SCP), over-current protection (OVP), under-voltage lockout (UVLO) protection, adjustable dead time (DT) control, and thermal shutdown. The MPQ6528 is available in a QFN-28 package with an exposed thermal pad. Applications include brushed DC motors, automotive actuators, gate openers, audio amplifiers and power converters.
- Charge pump gate driver supply
- Bootstrap high-side MOSFET (HSFET) driver with trickle-charge circuit for 100% duty cycle operation
- Low-power sleep mode
- Overcurrent protection (OCP)
- Adjustable dead time (DT) control to prevent shoot-through
- Fault indication output
- Thermally enhanced surface-mount package
- Available in AEC-Q100 grade 1
Hinweise
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
Technische Spezifikationen
1Kanäle
Halbbrücke
28Pin(s)
Oberflächenmontage
800mA
5V
-40°C
880µs
-
No SVHC (19-Jan-2021)
-
MOSFET
WFQFN-EP
PWM
1A
60V
150°C
-
AEC-Q100
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:China
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat