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Menge | Preis (ohne MwSt.) |
---|---|
1+ | 2,600 € |
10+ | 2,210 € |
25+ | 2,020 € |
50+ | 1,970 € |
100+ | 1,910 € |
250+ | 1,870 € |
500+ | 1,830 € |
1000+ | 1,810 € |
Produktspezifikationen
Produktbeschreibung
The IRS2110SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Anwendungen
Power-Management
Technische Spezifikationen
2Kanäle
High-Side und Low-Side
16Pin(s)
Oberflächenmontage
2.5A
10V
-40°C
130ns
-
MSL 3 - 168 Stunden
-
MOSFET
SOIC
Nicht invertierend
2.5A
20V
125°C
120ns
-
No SVHC (21-Jan-2025)
Technische Dokumente (1)
Alternativen für IRS2110SPBF
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Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Thailand
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat