IRF7420TRPBF

IRF7420TRPBF is a P-channel HEXFET® Power MOSFET from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvements, multiple devices can be used in an application with dramatically reduced board space. It is designed for vapor phase, infrared, or wave soldering technique.

• Drain-to-source breakdown voltage is -12V (VGS = 0V, ID = -250µA, TJ = 25°C)
• 0.007V/°C typical breakdown voltage temp coefficient (reference to 25°C, ID = -1mA)
• 14mohm minimum static drain-to-source on-resistance (VGS = -4.5V, ID = -11.5A)
• Gate threshold voltage range from -0.4 to -0.9V (VDS = VGS, ID = -250µA)
• 32S minimum forward transconductance (VDS = -10V, ID = -11.5A)
• 38nC typical total gate charge (ID = -11.5A, VDS = -6V, VGS = -4.5V)
• 8.8ns typical rise time (VDD = -6V, VGS = -4.5V, TJ = 25°C)
• 3529pF typical input capacitance (VGS = 0V, VDS = -10V, ƒ = 1.0MHz)
• 8 pin SO package, junction and storage temperature range from -55 to +150°C

Hinweise

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.