FM25L16B-DGTR

FM25L16B-DGTR is a 16Kbit non-volatile memory in a 8 pin DFN-EP package. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25L16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. FM25L16B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make FM25L16B ideal for non-volatile memory applications requiring frequent or rapid writes.

• 16Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8
• Advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
• Low power consumption of 200µA active current at 1MHz, 3µA (typ) standby current
• Low-voltage operation: VDD = 2.7V to 3.65V
• Industrial temperature range from –40°C to +85°C

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