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Menge | Preis (ohne MwSt.) |
---|---|
100+ | 0,930 € |
250+ | 0,874 € |
500+ | 0,841 € |
1000+ | 0,814 € |
2500+ | 0,785 € |
Produktspezifikationen
Produktbeschreibung
2EP110RXTMA1 is an EiceDRIVER™ power full-bridge transformer driver for IGBT and SiC MOSFET gate driver supply. It is a open loop full-bridge transformer driver for designing isolated gate driver supplies for a wide variety of switch technologies (IGBTs, SiC MOSFETs, GaN HEMTs, and others). It is optimized to supply gate drivers for a variety of switches such as TRENCHSTOP™ IGBTs, OptiMOS™ MOSFETs, CoolMOS™ superjunction MOSFETs, CoolGaN™ high electron mobility transistors, and CoolSiC™ MOSFETs together with EiceDRIVER™ gate driver ICs, and other similar products. Potential applications include Industrial motor drives - compact, standard, premium, servo drives, solar inverters, UPS and energy storage systems, welding, commercial air-conditioning, high-voltage DC-DC converters and DC-AC inverters, isolated switch-mode power supplies, power meters.
- Wide input supply range: from 4.5V to 20V
- Supports up to 5W output power supplies
- Wide frequency range: from 50kHz to 65kHz with an internal oscillator or external clock
- Adjustable overcurrent threshold, short circuit protection for power outputs
- Overtemperature protection, ready output to indicate normal operation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Rise time is 15ns typical at VVDD = 15V, CLOAD = 1nF, VOUT from 10% to 90%
- Fall time is 15ns typical at VVDD = 15V, CLOAD = 1nF, VOUT from 90% to 10%
- PG-TSSOP-8-1 package
- Operating ambient temperature range from -40 to 125°C
Technische Spezifikationen
2Kanäle
10mA
20V
125°C
280ns
8Pin(s)
4.5V
-40°C
280ns
No SVHC (21-Jan-2025)
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:China
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
Produkt-Konformitätszertifikat