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Menge | Preis (ohne MwSt.) |
---|---|
100+ | 1,000 € |
250+ | 0,937 € |
500+ | 0,902 € |
1000+ | 0,873 € |
2500+ | 0,859 € |
Produktspezifikationen
Produktbeschreibung
1EDB7275FXUMA1 is a EiceDRIVER™ 1EDBx275F series single-channel isolated gate driver ICs in 150 mil DSO package. It is a single-channel isolated gate driver IC designed to drive Si, SiC and GaN power switches. 1EDB7275FXUMA1 is available in an 8-pin DSO package with 4mm input-to-output creepage distance, it provides isolation by means of on-chip coreless transformer (CT) technology. With tight timing specifications, 1EDBx275F is designed for fast-switching medium-to-high power systems. Excellent common-mode rejection, low part-to-part skew, fast signal propagation and small package size make 1EDBx275F a superior alternative to high-side driving solutions using optocouplers or pulse transformers.
- 5A / 9A peak source / sink current, 4.2V / 3.9V UVLO ON / OFF
- UL 1577 (VISO = 3000 VRMS) isolation certification
- 45ns input-to-output propagation delay with excellent accuracy (+6/-4 ns)
- Separate low impedance source and sink outputs
- Fast clamping of parasitics-induced output overshoots under UVLO conditions
- Fast start-up times and fast recovery after supply glitches
- Optimized UVLO levels (4V, 8V, 12V, 15V) for Si, SiC and GaN transistors
- High common-mode transient immunity (CMTI > 300V/ns)
- Fully qualified according JEDEC for industrial applications
- Junction temperature range from -40 to 150°C
Technische Spezifikationen
1Kanäle
High-Side
SOIC
SOIC
Invertierend, nicht invertierend
9.8A
15V
125°C
45ns
-
No SVHC (21-Jan-2025)
Isoliert
GaN, Si MOSFET, SiC MOSFET
8Pin(s)
Oberflächenmontage
5.4A
3V
-40°C
45ns
-
MSL 3 - 168 Stunden
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:China
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat