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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7454DDP-T1-GE3
Order Code2283675
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id21A
Drain Source On State Resistance0.027ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation29.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
The SI7454DDP-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server, full/half-bridge DC-to-DC and synchronous rectification applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Communications & Networking
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
29.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.027ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000272
Product traceability