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Quantity | Price (ex VAT) |
---|---|
100+ | €0.708 |
500+ | €0.645 |
1000+ | €0.581 |
5000+ | €0.518 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€75.80 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4483ADY-T1-GE3
Order Code2335315RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19.2A
Drain Source On State Resistance0.0127ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max2.1V
Power Dissipation5.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4483ADY-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
19.2A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
5.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0127ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000129