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SI4103DY-T1-GE3
Power MOSFET, P Channel, 30 V, 16 A, 0.0067 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4103DY-T1-GE3
Order Code2857061RL
Product RangeTrenchFET Gen III
Technical Datasheet
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| 500+ | €0.351 |
| 1000+ | €0.310 |
| 5000+ | €0.260 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4103DY-T1-GE3
Order Code2857061RL
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
Drain Source On State Resistance0.0067ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
16A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0067ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000124
Product traceability