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SI2337DS-T1-GE3
Power MOSFET, P Channel, 80 V, 2.2 A, 0.216 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | €0.426 |
| 9000+ | €0.417 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
€1,278.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2337DS-T1-GE3
Order Code3879346
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.216ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Gate Source Threshold Voltage Max4V
Power Dissipation760mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
6V
Power Dissipation
760mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.216ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability