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TW045N120C,S1F(S
Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.059 ohm, TO-247
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ManufacturerTOSHIBA
Manufacturer Part NoTW045N120C,S1F(S
Order Code4049759
Also Known AsTW045N120C, TW045N120C,S1F
Technical Datasheet
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| 10+ | €19.980 |
| 50+ | €14.850 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTW045N120C,S1F(S
Order Code4049759
Also Known AsTW045N120C, TW045N120C,S1F
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.059ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation182W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.059ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
182W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006
Product traceability