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SCTW40N120G2V
Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.07 ohm, HiP247
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €10.410 |
| 5+ | €10.290 |
| 10+ | €10.170 |
| 50+ | €10.040 |
| 100+ | €9.920 |
| 250+ | €9.800 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW40N120G2V
Order Code3748722
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id36A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.07ohm
Transistor Case StyleHiP247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.45V
Power Dissipation278W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
36A
Drain Source On State Resistance
0.07ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.45V
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HiP247
Rds(on) Test Voltage
18V
Power Dissipation
278W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0045
Product traceability