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SCT040HU65G3AG
Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.055 ohm, HU3PAK
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €12.600 |
| 5+ | €11.590 |
| 10+ | €10.570 |
| 50+ | €10.560 |
| 100+ | €9.710 |
| 250+ | €8.850 |
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€12.60 (ex VAT)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT040HU65G3AG
Order Code4285873
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.055ohm
Transistor Case StyleHU3PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation221W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.055ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HU3PAK
Rds(on) Test Voltage
18V
Power Dissipation
221W
Product Range
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability