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BSM450D12P4G102
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 447 A, 1.2 kV, Module
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| Quantity | Price (ex VAT) |
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| 1+ | €512.370 |
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€512.37 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM450D12P4G102
Order Code4168759
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id447A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4.8V
Power Dissipation1.45kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
447A
Drain Source On State Resistance
-
No. of Pins
11Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
1.45kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.394
Product traceability