Print Page
BSM400D12P2G003
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
4 In Stock
Need more?
Next Day Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1,823.000 |
Price for:Each
Minimum: 1
Multiple: 1
€1,823.00 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM400D12P2G003
Order Code3573228
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id400A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4V
Power Dissipation2.45kW
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)
Product Overview
BSM400D12P2G003 is a SiC power module. This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD. Application includes motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 2.3V on-state static drain-source voltage (typ, Tj=25°C, ID=400A, VGS=18V)
- 397A drain current (DC(Tc=60°C) VGS=18V)
- 4mA drain cut-off current (max, VDS=1200V, VGS=0V, Tj=25°C)
- 1.8V source-drain voltage (typ, VGS=0V, IS=400A, Tj=25°C)
- 38nF input capacitance (typ, VDS=10V, VGS=0V,200KHz, Tj=25°C)
- 2500Vrms isolation voltage (terminals to baseplate f = 60Hz AC 1 min, Tj = 25°C)
- Junction temperature range from -40 to 150°C
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
400A
Drain Source On State Resistance
-
No. of Pins
-
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
Lead (23-Jan-2024)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
2.45kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.28