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FDMC007N08LCDC
Power MOSFET, N Channel, 80 V, 64 A, 0.0068 ohm, QFN, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDMC007N08LCDC
Order Code2895665RL
Product RangePowerTrench
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €1.590 |
| 500+ | €1.530 |
| 1000+ | €1.500 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC007N08LCDC
Order Code2895665RL
Product RangePowerTrench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id64A
Drain Source On State Resistance0.0068ohm
Transistor Case StyleQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangePowerTrench
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
FDMC007N08LCDC is a Power Trench® shielded gate N‐channel MOSFET. This is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications include primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive, solar.
- 5.1mohm typ static drain to source on resistance (VGS = 10V, ID = 22A, TJ = 25°C)
- 1.5V typical gate to source threshold voltage (VGS = VDS, ID = 130µA, TJ = 25°C)
- 80V typical drain to source breakdown voltage (ID = 250µA, VGS = 0V, TJ = 25°C)
- 5V drive capable, 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI, 100% UIL tested
- 1µA maximum zero gate voltage drain current (VDS = 64V, VGS = 0V)
- 80S typical forward transconductance (VDS = 5V, ID = 22A)
- 0.5ohm typ gate resistance (TJ = 25°C), 11ns typ Turn-on delay time (VDD = 40V,ID = 22A,VGS = 10V)
- 24nC typical reverse recovery charge (IF = 11A, di/dt = 300A/µs)
- PQFN8 package, operating and storage junction temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
64A
Transistor Case Style
QFN
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
PowerTrench
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability