Print Page
NVHL080N120SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 44 A, 1.2 kV, 0.08 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVHL080N120SC1
Order Code3018978
Product RangeEliteSiC Series
Technical Datasheet
2,076 In Stock
Need more?
Next Day Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €12.240 |
| 5+ | €10.610 |
| 10+ | €8.980 |
| 50+ | €8.030 |
| 100+ | €8.020 |
| 250+ | €8.000 |
Price for:Each
Minimum: 1
Multiple: 1
€12.24 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVHL080N120SC1
Order Code3018978
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id44A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
NVHL080N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are automotive on board charger, automotive DC-DC converter for EV/HEV.
- AEC-Q101 qualified and PPAP capable
- 100% UIL tested
- Low effective output capacitance (typ. Coss= 80pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current RJC is 31A at TC = 25°C
- Power dissipation RJC is 89W at TC = 100°C
- Single pulse surge drain current capability is 132A at TA = 25°C, tp = 10µs, RG = 4.7ohm
- Operating junction and storage temperature range from -55 to +175°C
- TO247-3L package
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
44A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
348W
Product Range
EliteSiC Series
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85413000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0007
Product traceability