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NTBG045N065SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 62 A, 650 V, 0.031 ohm, TO-263 (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNTBG045N065SC1
Order Code3766198
Product RangeEliteSiC Series
Technical Datasheet
464 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €9.050 |
| 10+ | €7.620 |
| 50+ | €7.560 |
| 100+ | €6.700 |
| 250+ | €6.570 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG045N065SC1
Order Code3766198
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id62A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.031ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation242W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
62A
Drain Source On State Resistance
0.031ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
242W
Product Range
EliteSiC Series
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability