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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD42CT4G
Order Code2101378RL
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Continuous Collector Current6A
Power Dissipation20W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The MJD42CT4G is a 6A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
- Complementary device
- Electrically similar to popular TIP41 and TIP42 series
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
6A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
20W
Transistor Mounting
Surface Mount
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for MJD42CT4G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003
Product traceability