Print Page
Image is for illustrative purposes only. Please refer to product description.
92,096 In Stock
Need more?
Next Day Delivery
Order before 17:00 standard shipping
Quantity | Price (ex VAT) |
---|---|
100+ | €0.0997 |
500+ | €0.0958 |
1500+ | €0.0939 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€14.97 (ex VAT)
A € 5.00 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS138W
Order Code2454148RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id210mA
On Resistance Rds(on)1.17ohm
Drain Source On State Resistance3.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.3V
Power Dissipation340mW
Power Dissipation Pd340mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
Product Overview
The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for extremely low RDS (ON)
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
50V
On Resistance Rds(on)
1.17ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation
340mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
210mA
Drain Source On State Resistance
3.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.3V
Power Dissipation Pd
340mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001021