2N7000-D26Z
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 2000+ | €0.0982 |
| 6000+ | €0.0905 |
Product Information
Product Overview
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Junction-to-ambient thermal resistance
Technical Specifications
N Channel
200mA
TO-92
10V
400mW
150°C
-
No SVHC (27-Jun-2024)
60V
5ohm
Through Hole
2.1V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate