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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFX120N65X2
Order Code3930114
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id120A
Drain Source On State Resistance0.024ohm
Transistor Case StylePLUS247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.25kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor control, PFC circuits, robotics and servo controls application.
- Low QG
- Low package inductance
- High power density
- Easy to mount
- Space savings
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
PLUS247
Rds(on) Test Voltage
10V
Power Dissipation
1.25kW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability