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IPD60R360P7ATMA1
Power MOSFET, N Channel, 600 V, 9 A, 0.305 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD60R360P7ATMA1
Order Code2784038RL
Product RangeCoolMOS P7
Also Known AsIPD60R360P7, SP001606048
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.719 |
| 500+ | €0.609 |
| 1000+ | €0.496 |
| 5000+ | €0.444 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD60R360P7ATMA1
Order Code2784038RL
Product RangeCoolMOS P7
Also Known AsIPD60R360P7, SP001606048
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id9A
Drain Source On State Resistance0.305ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation41W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.305ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS P7
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
Product traceability