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IPB60R299CPAATMA1
Power MOSFET, N Channel, 600 V, 11 A, 0.27 ohm, TO-263 (D2PAK), Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R299CPAATMA1
Order Code3294653RL
Product RangeCoolMOS
Also Known AsIPB60R299CPA, SP000539970
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id11A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation96W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2018)
Alternatives for IPB60R299CPAATMA1
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.019958