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GS66516BMRXUSA1
Gallium Nitride (GaN) Transistor, 650 V, 60 A, 0.032 ohm, 14.2 nC, GaNPX, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €48.810 |
| 5+ | €46.090 |
| 10+ | €43.280 |
| 50+ | €41.830 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
€48.81 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoGS66516BMRXUSA1
Order Code4715923
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id60A
Drain Source On State Resistance0.032ohm
Typical Gate Charge14.2nC
Transistor Case StyleGaNPX
Transistor MountingSurface Mount
No. of Pins6Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.032ohm
Transistor Case Style
GaNPX
No. of Pins
6Pins
Qualification
-
Continuous Drain Current Id
60A
Typical Gate Charge
14.2nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability