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BTS282ZE3180AATMA2
Power MOSFET, N Channel, 49 V, 80 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount
202 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €7.480 |
| 5+ | €7.330 |
| 10+ | €7.180 |
| 50+ | €7.030 |
| 100+ | €6.880 |
| 250+ | €6.730 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
€7.48 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBTS282ZE3180AATMA2
Order Code2725828
Product RangeTEMPFET
Also Known AsBTS282Z E3180A, SP000910848
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds49V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0058ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeTEMPFET
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
49V
Drain Source On State Resistance
0.0058ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
7Pins
Product Range
TEMPFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003