Product Information
Alternatives for S29GL128P90TFIR20
1 Product Found
Product Overview
The S29GL128P90TFIR20 is a 128MB page mode Flash Memory featuring 90nm MirrorBit process technology. This device offers a fast page access time of 90ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
- Lowest address sector protected
- Enhanced Versatile I/O™ control
- Secured silicon sector region
- Can be programmed and locked at the factory or by the customer
- 100000 Erase cycles per sector typical
- 20 Years data retention typical
- Suspend and resume commands for program and erase operations
- Write operation status bits indicate program and erase operation completion
- Unlock bypass program command - Reduces programming time
- Support for CFI (Common Flash Interface)
- Persistent and password methods of advanced sector protection
- WA#/ACC input - Protects first or last sector regardless of sector protection settings
- Hardware reset input (RESET#) resets device
- Ready/busy# output (RY/BY#) detects program or erase cycle completion
Applications
Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
Technical Specifications
Parallel NOR
16M x 8bit / 8M x 16bit
TSOP
-
3V
-
-40°C
3V Parallel NOR Flash Memories
No SVHC (23-Jan-2024)
128Mbit
CFI
56Pins
90ns
3.6V
Surface Mount
85°C
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate