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Menge | Preis (ohne MwSt.) |
---|---|
10+ | 80,260 € |
25+ | 78,650 € |
100+ | 77,050 € |
Produktspezifikationen
Produktbeschreibung
ADL8121ACPZN is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.025GHz to 12GHz. The ADL8121 provides a typical gain of 16.5dB, a 2.5dB typical noise figure, and a typical output third-order intercept (OIP3) of 36dBm across the 0.025GHz to 10GHz frequency range, requiring only 95mA from a 5V supply voltage. The saturated output power (PSAT) of 21.5dBm typical across the 0.025GHz to 10GHz frequency range enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase and quadrature (I/Q) or image rejection mixers. Applications include test instrumentation, military communications, military radar, telecommunications.
- Single positive supply (self biased)
- Frequency range from 0.025 to 10GHz
- Gain is 16.5dB typical at (TA = 25°C)
- Noise figure is 2.5dB typical at (TA = 25°C)
- Input return loss is 12dB typical at (TA = 25°C)
- Power for 1dB compression is 21dBm typical at (TA = 25°C)
- OIP3 is 36dBm typical at (measurement taken at output power (POUT) per tone = 5dBm)
- IDQ current is 95mA typical at (TA = 25°C)
- Second-order intercept is 40dBm typical at (measurement taken at POUT per tone = 5dBm)
- Operating temperature range from -40°C to +85°C, 6-lead LFCSP package
Hinweise
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technische Spezifikationen
25MHz
17dB
6Pin(s)
6V
85°C
12GHz
3.5dB
2V
-40°C
No SVHC (21-Jan-2025)
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Philippines
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
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