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| Quantity | Price (ex VAT) |
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| 5+ | €0.277 |
| 50+ | €0.168 |
| 100+ | €0.0773 |
| 500+ | €0.0726 |
| 1500+ | €0.0678 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMSD301T1G
Order Code2463432
Product RangeMMSD3
Technical Datasheet
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage600mV
Diode Capacitance0.9pF
Diode Case StyleSOD-123
No. of Pins2 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product RangeMMSD3
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMSD301T1G is a Schottky Barrier Diode designed for high-efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
- Extremely low minority carrier lifetime
- Very low capacitance
- Low reverse leakage
- -55 to 125°C Operating junction temperature range
Applications
RF Communications, Sensing & Instrumentation, Industrial
Technical Specifications
Diode Configuration
Single
Forward Current
200mA
Diode Capacitance
0.9pF
No. of Pins
2 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (27-Jun-2024)
Reverse Voltage
30V
Forward Voltage
600mV
Diode Case Style
SOD-123
Diode Mounting
Surface Mount
Product Range
MMSD3
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability