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50+ | €0.624 |
100+ | €0.425 |
500+ | €0.355 |
1500+ | €0.336 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC606P
Order Code1495224
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id6A
Drain Source On State Resistance0.026ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC606P is a 1.8V specified P-channel MOSFET uses low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000318
Product traceability