CY15B108QN-40LPXI

CY15B108QN-40LPXI is a CY15B108QN 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM). A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the CY15X108QN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories.

• Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
• Up to 40MHz frequency, supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Hardware protection using the write protect (active-low WP) pin
• Software protection using write disable (WRDI) instruction
• Software block protection for 1/4, 1/2, or entire array
• Manufacturer ID and product ID, unique device ID, serial number
• Dedicated special sector write and read
• Stored content can survive up to three standard reflow soldering cycles
• 2.6mA (typ) active current at 40MHz, 3.5µA (typ) standby current
• 8-pin GQFN package, industrial temperature range from -40°C to +85°C

Hinweise

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.