Low

TLV1117LV18DCYR - 

LDO-Festspannungsregler, 2V bis 5.5V, 570mV Dropout, 1.8Vout, 1Aout, SOT-223-4

TEXAS INSTRUMENTS TLV1117LV18DCYR

Abbildung ggf. ähnlich. Alle Angaben ohne Gewähr. Ausschlaggebend sind die Produktinformationen des Herstellers.

Herstellerteilenummer:
TLV1117LV18DCYR
Bestellnummer:
2492356
Produktsortiment
1.8V 1A LDO Voltage Regulators
Technisches Datenblatt:
(EN)
Technische Dokumentation anzeigen

Produktspezifikationen

:
4Pin(s)
:
1.8V
:
2V
:
-40°C
:
Fest
:
125°C
:
SOT-223
:
1.8V 1A LDO Voltage Regulators
:
5.5V
:
1A
:
Stückweise
:
-
:
570mV
:
-
:
-
:
MSL 1 - unbegrenzt
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Produktbeschreibung

The TLV1117LV18DCYR is a single channel positive low dropout (LDO) linear regulator with fixed output in 4 pin SOT-223 package. This regulator is a low input voltage version of popular TLV1117 voltage regulator. It is an extremely low power device that consumes 500 times lower quiescent current than traditional 1117 voltage regulators by making the device suitable for applications that requires very low standby current. It is stable with 0mA of load current and there is no minimum load requirement. This feature makes device as an ideal choice for applications where regulator must power very small loads during standby in addition to large currents of 1A during normal operation. The TLV1117LV offers excellent line and load transient performance resulting in very small magnitude undershoots and overshoots of output voltage when load current requirement changes from less than 1mA to more than 500mA.
  • Fixed output voltage of 1.8V
  • Output current of 1A
  • Low dropout voltage of 570mV at 1A
  • Input voltage range from 2V to 5.5V (absolute maximum VIN = 6V)
  • 1.5% typical accuracy
  • Low quiescent current of 100µA
  • High PSRR of 65dB at 1KHz
  • Thermal shutdown and overcurrent protection
  • Operating temperature range from -40°C to 125°C

Anwendungen

Power-Management, Tragbare Geräte, Unterhaltungselektronik, Kommunikation & Netzwerke

Hinweise

This device has limited built-in ESD protection. The leads should be shorted or device should be placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

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