Low

LP38852MR-ADJ/NOPB - 

LDO Voltage Regulator, Adjustable, 930mV to 5.5V in, 180mV drop, 800mV to 1.8V/1.5A out, SOIC-8

TEXAS INSTRUMENTS LP38852MR-ADJ/NOPB

Abbildung ggf. ähnlich. Alle Angaben ohne Gewähr. Ausschlaggebend sind die Produktinformationen des Herstellers.

Herstellerteilenummer:
LP38852MR-ADJ/NOPB
Bestellnummer:
2492295
Technisches Datenblatt:
(EN)
Technische Dokumentation anzeigen

Produktspezifikationen

:
8Pin(s)
:
-
:
930mV
:
-40°C
:
Einstellbar
:
125°C
:
SOIC
:
-
:
5.5V
:
1.5A
:
Stückweise
:
1.8V
:
180mV
:
-
:
800mV
:
MSL 3 - 168 Stunden
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Produktbeschreibung

The LP38852MR-ADJ/NOPB is a single channel, high accuracy low dropout (LDO) linear regulator with adjustable output in 8 pin HSOP package. This high current, fast response regulator can maintain output voltage regulation with extremely low input to output voltage drop. It is fabricated on a CMOS process and operates from two input voltages. The VBIAS provides voltage to drive gate of N-MOS power transistor while VIN is input voltage which supplies power to load. The use of an external bias rail allows the regulator to operate from ultra low VIN voltages. Unlike bipolar regulators, the CMOS architecture consumes extremely low quiescent current at any output load current. The use of NMOS power transistor results in wide bandwidth and minimum external capacitance which is required to maintain loop stability. The fast transient response of LP38852 makes it suitable for use in powering DSP, microcontroller core voltages and switch mode power supply post regulators.
  • Adjustable output voltage range from 0.8V to 1.8V
  • Wide VBIAS supply operating range from 3V to 5.5V
  • Dropout voltage of 130mV at 1.5A load current
  • Output current of 1.5A
  • Typical load current of 10mA at 1.5A output current
  • Programmable soft start time
  • Overtemperature and overcurrent protection
  • Precision output voltage accuracy of ±1.5% (TJ = 25°C), ±2.0% (0°C to 125°C ), ±3.0% (-40 to 125°C)
  • Operating temperature range from -40°C to 125°C

Anwendungen

Power-Management

Hinweise

This device has limited built-in ESD protection. The leads should be shorted or device should be placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

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