Low

LM2940T-5.0 - 

LDO-Festspannungsregler, 0V bis 26V, 500mV Dropout, 5Vout, 1Aout, TO-220-3

TEXAS INSTRUMENTS LM2940T-5.0

Abbildung ggf. ähnlich. Alle Angaben ohne Gewähr. Ausschlaggebend sind die Produktinformationen des Herstellers.

Herstellerteilenummer:
LM2940T-5.0
Bestellnummer:
9490205
Produktsortiment
5V 1A LDO Voltage Regulators
Technisches Datenblatt:
(EN)
Technische Dokumentation anzeigen

Produktspezifikationen

:
3Pin(s)
:
5V
:
0V
:
-40°C
:
Fest
:
125°C
:
TO-220
:
5V 1A LDO Voltage Regulators
:
26V
:
1A
:
Stückweise
:
-
:
500mV
:
-
:
-
:
-
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Produktbeschreibung

The LM2940T-5.0 is a Positive Voltage Regulator features the ability to source 1A of output current with a dropout voltage of typically 0.5V and a maximum of 1V over the entire temperature range. Furthermore, a quiescent current reduction circuit has been included which reduces the ground current when the differential between the input voltage and the output voltage exceeds approximately 3V. The quiescent current with 1A of output current and an input-output differential of 5V is therefore only 30mA. Higher quiescent currents only exist when the regulator is in the dropout mode (VIN - VOUT <=3V). The LM2940T-5.0 and all regulated circuitry are protected from reverse battery installations or 2-battery jumps. During line transients, such as load dump when the input voltage can momentarily exceed the specified maximum operating voltage, the regulator will automatically shut down to protect both the internal circuits and the load. It cannot be harmed by temporary mirror-image insertion.
  • 0.5V at IOUT = 1A Dropout voltage typically
  • Output voltage trimmed before assembly
  • Reverse battery protection
  • Internal short-circuit current limit
  • Mirror image insertion protection
  • P+ Product enhancement tested

Anwendungen

Fahrzeugelektronik, Power-Management, Industrie

Hinweise

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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